Mark Saly
105Patents
5h-index
140Co-inventors
73Inventor score
Filing activity: Mar 1, 2012 → Feb 1, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8728955B2 | Method of plasma activated deposition of a conformal film on a substrate surface | Electricity | 62 | Active |
| US9175023B2 | Molybdenum allyl complexes and use thereof in thin film deposition | Chemistry; Metallurgy | 17 | Active |
| US10633740B2 | Methods for depositing coatings on aerospace components | Mechanical Engineering; Lighting; Heating | 16 | Active |
| US11028480B2 | Methods of protecting metallic components against corrosion using chromium-containing thin films | Mechanical Engineering; Lighting; Heating | 12 | Active |
| US9911591B2 | Selective deposition of thin film dielectrics using surface blocking chemistry | Electricity | 5 | Active |
| US9875888B2 | High temperature silicon oxide atomic layer deposition technology | Electricity | 3 | Active |
| US9520284B1 | Ion beam activated directional deposition | Electricity | 3 | Active |
| US10023958B2 | Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors | Chemistry; Metallurgy | 3 | Active |
| US11621172B2 | Vapor phase thermal etch solutions for metal oxo photoresists | Physics | 2 | Active |
| US11028477B2 | Bottom-up gap-fill by surface poisoning treatment | Electricity | 2 | Active |
| US11342481B2 | Preclean and encapsulation of microLED features | Electricity | 2 | Active |
| US11447865B2 | Deposition of low-κ films | Chemistry; Metallurgy | 2 | Active |
| US11848229B2 | Selective blocking of metal surfaces using bifunctional self-assembled monolayers | Electricity | 1 | Active |
| US11164745B2 | Method of enhancing selective deposition by cross-linking of blocking molecules | Electricity | 1 | Active |
| US11398388B2 | Methods for selective dry etching gallium oxide | Electricity | 1 | Active |
| US9812318B2 | Low temperature molecular layer deposition of SiCON | Electricity | 1 | Active |
| US10170298B2 | High temperature silicon oxide atomic layer deposition technology | Electricity | 1 | Active |
| US9177783B2 | Substituted silacyclopropane precursors and their use for the deposition of silicon-containing films | Electricity | 1 | Active |
| US11649560B2 | Method for forming silicon-phosphorous materials | Electricity | 0 | Active |
| US11371136B2 | Methods for selective deposition of dielectric on silicon oxide | Electricity | 0 | Active |
| US11536708B2 | Methods to fabricate dual pore devices | Performing Operations; Transporting | 0 | Active |
| US11732356B2 | Multilayer encapsulation stacks by atomic layer deposition | Electricity | 0 | Active |
| US11549181B2 | Methods for atomic layer deposition of SiCO(N) using halogenated silylamides | Chemistry; Metallurgy | 0 | Active |
| US9685325B2 | Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD | Electricity | 0 | Active |
| US12291779B2 | Methods of selective atomic layer deposition | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.