Methods of forming a pattern of a semiconductor device
US9520289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2014 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Dec 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02277
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a pattern of a semiconductor device, a hard mask layer is formed on a substrate. A photoresist film is coated on the hard mask layer. The photoresist film is exposed and developed to form a first photoresist pattern. A smoothing process is performed on the first photoresist pattern to form a second photoresist pattern having a roughness property lower from that of the first photoresist pattern. In the smoothing process, a surface of the first photoresist pattern is treated with an organic solvent. An ALD layer is formed on a surface of the second photoresist pattern. The ALD layer is anisotropically etched to form an ALD layer pattern on a sidewall of the second photoresist pattern. The hard mask layer is etched using the second photoresist pattern and the ALD layer pattern as an etching mask to form a hard mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.