Patent · US Active

Silicon designs for high voltage isolation

US9520354B1 · kind B1 · utility

3Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 29, 2015
Grant dateDec 13, 2016
Priority date
Expiry dateJul 29, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH02M3/33523
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An isolation system, isolation capacitor, and Integrated Circuit are disclosed. The isolation capacitor is described to include a first capacitive element, a second capacitive element, a primary isolation layer positioned between the first and second capacitive elements, as well as a secondary isolation layer positioned between the first and second capacitive elements. The secondary isolation layer has an area that is larger than an area of one or both of the first and second capacitive elements, thereby reducing the likelihood of breakdown between the first and second capacitive elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.