Trenched Faraday shielding
US9520367B2 · kind B2 · utility
3Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2014 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Aug 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a semiconductor substrate having a surface with a trench, first and second conduction terminals supported by the semiconductor substrate, a control electrode supported by the semiconductor substrate between the first and second conduction terminals and configured to control flow of charge carriers during operation between the first and second conduction terminals, and a Faraday shield supported by the semiconductor substrate and disposed between the control electrode and the second conduction terminal. At least a portion of the Faraday shield is disposed in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.