Method of forming a semiconductor device and structure therefor
US9520388B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2014 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Nov 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/611
Abstract
In one embodiment, a semiconductor device may include a first transistor having a first current carrying electrode, a second current carrying electrode, and a control electrode; a first bipolar transistor having a collector coupled to the first current carrying electrode of the first transistor, a base coupled to the second current carrying electrode of the first transistor, and an emitter of the first bipolar transistor coupled to a first node of the semiconductor device. In an embodiment, the first node is connected to a terminal of a semiconductor package. An embodiment may include a semiconductor component coupled between the base of the first bipolar transistor and the emitter of the second bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.