Semiconductor device having gradient implant region and manufacturing method thereof
US9520471B1 · kind B1 · utility
2Cited by
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20Claims
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Key dates
| Filing date | Nov 17, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Nov 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source well having the first conductivity type disposed in the high-voltage well, a drift region disposed in the high-voltage well and spaced apart from the source well, and a gradient implant region having the second conductivity type and disposed in the high-voltage well between the source well and the drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.