Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure
US9520472B2 · kind B2 · utility
5Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.