Method of cutting metal gate

US9520482B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Po-Chin Chang · Taichung, TW
• Chih-Hao Wang · Dashulong, TW
• Kai-Chieh Yang · Kaohsiung, TW
• Shih-Ting Hung · New Taipei, TW
• Wei-Hao Wu · Hsinchu, TW
• Gloria Wu · Austin, US
• Inez Fu · Hsinchu, TW
• Chia-Wei Su · Hsinchu, TW
• Yi-Hsuan Hsiao · Taipei, TW

Key dates

• Filing date: Nov 13, 2015
• Grant date: Dec 13, 2016
• Expiry date: Nov 13, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177

Abstract

A method for fabricating a semiconductor device includes forming a first fin and a second fin on a substrate. The first fin has a first gate region and the second fin has a second gate region. The method also includes forming a metal-gate line over the first and second gate regions. The metal-gate line extends from the first fin to the second fin. The method also includes applying a line-cut to separate the metal-gate line into a first sub-metal gate line and a second sub-metal gate line and forming an isolation region within the line cut.