Semiconductor device having buried layer
US9520492B2 · kind B2 · utility
6Cited by
16References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Feb 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, and a buried layer having the first conductivity type formed below the high-voltage well and vertically aligned with the drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.