Quantum dot infrared photodetector

US9520514B2 · kind B2 · utility

Assignee

• National Taiwan University · TW

Inventors

• Si-Chen Lee · Taipei, TW
• Jheng-Han Lee · Taipei, TW
• Zong-Ming Wu · Taipei, TW

Key dates

• Filing date: Jun 11, 2013
• Grant date: Dec 13, 2016
• Expiry date: Aug 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/14

Abstract

A quantum dot infrared photodetector (QDIP) that can enhance the photocurrent to a greater level than the dark current and/or can be operated at high temperatures is disclosed. The quantum dot infrared photodetector comprises at least one quantum well stack and a plurality of quantum dot layers. The quantum well stack is disposed between the pluralities of quantum dot layers. The quantum well stack comprises two spacer layers and a carrier supplying layer. The carrier supplying layer is disposed between the spacer layers. When the quantum dot infrared photodetector is applied with two bias voltages respectively, the carrier supplying layer supplies carriers to the quantum dot layers.