Patent · US Active

Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact

US9520555B2 · kind B2 · utility

1Cited by

5References

20Claims

0Family size

Assignee

Ovonyx Memory Technology, LLC · US

Inventors

Fabio Pellizzer · Boise, US
Innocenzo Tortorelli · Cernusco sul Naviglio, IT

Key dates

Filing date	Mar 9, 2015
Grant date	Dec 13, 2016
Priority date	—
Expiry date	Mar 9, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/882
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.