Semiconductor device and method of fabricating the same
US9520556B2 · kind B2 · utility
6Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Jun 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.