Gallium and nitrogen containing laser device having confinement region
US9520695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2014 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Sep 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.