Lower page read for multi-level cell memory
US9524774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2015 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Nov 30, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5646
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic memory or controller may use a first type of read command, addressed to a first page of memory of an electronic memory that includes information to indicate that a second page of memory of the electronic memory has not been programmed and a second type of read command, addressed to the first page of memory, that includes information to indicate that the second page of memory has been programmed. The first page of memory may include a lower page of a multi-level cell (MLC), and the second page of memory may include an upper page of the same MLC. The second page of memory is enabled during a period of time that the first type of read command is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.