Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9524867B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Jan 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.