Patent · US Active

Semiconductor device comprising an e-fuse and a FET

US9524962B2 · kind B2 · utility

2Cited by

1References

17Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Andrei Sidelnicov · Dresden, DE
Andreas Kurz · Oberursel, DE
Alexandru Romanescu · Nijmegen, NL

Key dates

Filing date	Dec 20, 2013
Grant date	Dec 20, 2016
Priority date	—
Expiry date	Dec 20, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a semiconductor device including the steps of forming an electrically programmable fuse (e-fuse) on an isolation region and a transistor on an active region of a wafer, wherein forming the transistor includes forming a dummy gate above a substrate, removing the dummy gate and forming a metal gate in place of the dummy gate, and forming the e-fuse includes forming a metal-containing layer above the isolation region, forming a semiconductor layer on the metal-containing layer during the process of forming the dummy gate and of the same material as the dummy gate, forming a hard mask layer on the semiconductor layer formed on the metal-containing layer, and forming contact openings in the hard mask layer and semiconductor layer during the process of removing the dummy gate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.