Semiconductor device having metal gate and fabrication method thereof
US9524968B1 · kind B1 · utility
4Cited by
3References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 27, 2015 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Aug 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method of semiconductor device having metal gate includes providing a substrate, successively forming a gate insulating layer and a bottom barrier layer on the surface of the substrate, forming a work function layer covering the bottom barrier layer, removing the work function layer, and forming a top barrier layer on the bottom barrier layer to be directly contact with the bottom barrier layer, and forming a metal layer on the top bottom barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.