Semiconductor devices and methods for forming the same
US9525045B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Mar 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for forming the same are provided. The semiconductor device includes a substrate having a first conductive type and an epitaxial layer having the first conductive type disposed over the substrate, wherein a trench is formed in the epitaxial layer. The semiconductor device also includes a polysilicon layer having the first conductive type disposed in the trench. The semiconductor device further includes a doped region having a second conductive type disposed along a sidewall and a bottom of the trench in the epitaxial layer, wherein a thickness along the sidewall and the bottom of the trench is uniform, and wherein the thickness is a vertical distance between the outermost side of the trench to the sidewall or the bottom of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.