High-electron-mobility transistors

US9525055B2 · kind B2 · utility

Assignee

• POWER INTEGRATIONS, INC. · US

Inventors

• Alexey Kudymov · Ringoes, US
• Jamal Ramdani · Gilbert, US
• Linlin Liu · Fryeburg, US

Key dates

• Filing date: Mar 7, 2016
• Grant date: Dec 20, 2016
• Expiry date: Mar 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

High-electron-mobility transistors that include field plates are described. In a first implementation, a HEMT includes a first and a second semiconductor material disposed to form a heterojunction at which a two-dimensional electron gas arises and source, a drain, and gate electrodes. The gate electrode is disposed to regulate conduction in the heterojunction between the source electrode and the drain electrode. The gate has a drain-side edge. A gate-connected field plate is disposed above a drain-side edge of the gate electrode and extends laterally toward the drain. A second field plate is disposed above a drain-side edge of the gate-connected field plate and extends laterally toward the drain.