Semiconductor devices and methods of manufacturing the same
US9525128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2014 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Mar 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized, and etching the material layer through the second surface to form a material pattern. An etch rate of the capping oxide layer is less than an etch rate of the material layer. A semiconductor device may include a lower electrode on a substrate, a data storage part on a top surface of the lower electrode, an upper electrode on the data storage part, and a capping oxide layer arranged on at least a portion of a top surface of the upper electrode. The capping oxide layer may include an oxide formed by oxidation of an upper surface of the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.