Atomic-layer deposition method using compound gas jet
US9528184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Mar 13, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4585
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a thin film on a substrate using atmospheric pressure atomic-layer deposition includes providing a chamber having an atmosphere and a stationary support located in the chamber. The moveable substrate is located in a spatial relationship with the stationary support. A pressurized compound fluid flow, including an inert fluid surrounding a reactive fluid, is provided simultaneously through the stationary support that impinges on at least a portion of the moveable substrate to fluidically levitate the moveable substrate and expose the moveable substrate to the compound fluid flow to deposit a thin film on the moveable substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.