Optoelectronic device, in particular memory device
US9530489B2 · kind B2 · utility
0Cited by
8References
29Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 29, 2014 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Dec 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A memory device may include an access transistor, and a memory cell configured to store an item of information. The memory cell may include first and second electrodes configured to have different optoelectronic states corresponding respectively to two values of the item of information, and to switch between the different optoelectronic states based upon a control signal external to the memory cell, the different optoelectronic states being naturally stable in an absence of the control signal. The memory cell may also include a solid electrolyte between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.