Temperature dependent sensing scheme to counteract cross-temperature threshold voltage distribution widening
US9530512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2014 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Dec 17, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods for reducing cross-temperature threshold voltage distribution widening by applying a temperature dependent sensing scheme during read operations are described. In some embodiments, during a read operation, the sensing conditions applied to memory cells within a memory array (e.g., the sensing time and the read voltage applied to the memory cells during the sensing time) may be set and/or adjusted based on a temperature of the memory cells during the read operation, a previous temperature of the memory cells when the memory cells were programmed, and the programmed states of neighboring memory cells. In some cases, the sensing time for sensing a memory cell of a NAND string and the source voltage applied to a source line connected to the NAND string may be set based on the temperature of the memory cells during sensing and the previous temperature of the memory cells when the memory cells were programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.