Hydrogen-free amorphous dielectric insulating thin films with no tunneling states
US9530535B2 · kind B2 · utility
2Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2014 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Nov 12, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC21D2201/03
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10−8 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.