Forming source/drain zones with a dielectric plug over an isolation region between active regions
US9530683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2014 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Feb 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment includes forming an isolation region between first and second active regions in a semiconductor, forming an opening between the first and second active regions by removing a portion of the isolation region, and forming a dielectric plug within the opening so that the dielectric plug is between the first and second active regions and so that a portion of the dielectric plug extends below upper surfaces of the first and second active regions. The dielectric plug may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.