Patent · US Active

Semiconductor device and method of fabricating the same

US9530726B2 · kind B2 · utility

2Cited by
2References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2013
Grant dateDec 27, 2016
Priority date
Expiry dateMar 17, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.