Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions
US9530733B2 · kind B2 · utility
6Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 27, 2013 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Sep 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of an aspect includes forming a first thicker layer of a first material over a first region having a first surface material by separately forming each of a first plurality of thinner layers by selective chemical reaction. The method also includes limiting encroachment of each of the first plurality of thinner layers over a second region that is adjacent to the first region. A second thicker layer of a second material is formed over the second region having a second surface material that is different than the first surface material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.