Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof

US9530833B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Dina H. Triyoso · Mechanicville, US
• Sanford Chu · Singapore, SG
• Johannes Mueller · Berlin, DE
• Patrick Polakowski · Dresden, DE

Key dates

• Filing date: Jun 17, 2014
• Grant date: Dec 27, 2016
• Expiry date: Feb 19, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/03
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An illustrative method disclosed herein includes providing a semiconductor structure. The semiconductor structure includes a first interlayer dielectric provided over a semiconductor substrate. A first electrode of a first capacitor is formed over the first interlayer dielectric. A layer of first dielectric material is deposited over the first electrode of the first capacitor and the first interlayer dielectric. A layer of electrically conductive material is deposited over the layer of first dielectric material. A second electrode of the first capacitor and a first electrode of the second capacitor are formed from the layer of electrically conductive material. After the formation of the second electrode of the first capacitor and the first electrode of the second capacitor, a layer of second dielectric material is deposited and a second electrode of the second capacitor is formed over the layer of second dielectric material.