Patent · US Active

Semiconductor apparatus

US9530836B2 · kind B2 · utility

2Cited by
0References
5Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 31, 2016
Grant dateDec 27, 2016
Priority date
Expiry dateMar 31, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/393

Abstract

A semiconductor apparatus includes a semiconductor substrate including a device region and a peripheral region. The peripheral region includes guard rings. A first peripheral insulating film, first peripheral conducting films, a second peripheral insulating film and second peripheral conducting films are laminated in the peripheral region. Each of the first peripheral conducting films extends annularly. Each of the second peripheral conducting films overlaps a part of the corresponding first peripheral conducting film. Each of the second peripheral conducting films is connected to the corresponding first peripheral conducting film via a first contact hole. Each of the second peripheral conducting films is connected to the corresponding guard ring via a second contact hole. A center of at least one of the second contact holes is located on inner side with respect to a center line of the guard ring in a width direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.