Methods of fabricating a semiconductor device
US9530870B2 · kind B2 · utility
2Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating a semiconductor device. The method includes forming a gate pattern on a semiconductor substrate, injecting amorphization elements into the semiconductor substrate to form an amorphous portion at a side of the gate pattern, removing the amorphous portion to form a recess region, and forming a source/drain pattern in the recess region. When the recess region is formed, an etch rate of the amorphous portion is substantially the same in two different directions (e.g., <111> and any other direction) of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.