Patent · US Active

Resist underlayer film-forming composition

US9534140B2 · kind B2 · utility

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6Claims

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Assignee

NISSAN CHEMICAL INDUSTRIES, LTD. · JP

Inventors

Tomoya Ohashi · Toyama, JP
Shigeo Kimura · Tagajo, JP
Hiroto OGATA · Toyama, JP

Key dates

Filing date	Dec 17, 2013
Grant date	Jan 3, 2017
Priority date	—
Expiry date	Dec 17, 2033

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC08K5/0008
WIPO fieldOptics
WIPO sectorInstruments

Abstract

There is provided a resist underlayer film-forming composition having excellent solubility in a solvent containing propylene glycol monomethyl ether as a main component. A resist underlayer film-forming composition comprising a polymer having a structural unit of Formula (1a) or Formula (1c) and a structural unit of Formula (1b) and a solvent containing more than 50% by mass of propylene glycol monomethyl ether, wherein in the polymer, the structural unit of Formula (1a) or Formula (1c) and the structural unit of Formula (1b) are arranged alternately.(In Formulae (1a) and (1b), Q is a phenylene group or a naphthylene group, m is 1 or 2, and each of n is independently 0 or 1).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.