Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal
US9534317B2 · kind B2 · utility
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Inventors
Key dates
| Filing date | Oct 29, 2013 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Oct 31, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n>=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): Bkk-1<=cos−1(sin(2.3 degrees)/sin Ck), formula (b): Bkk<=cos−1(sin(2.3 degrees)/sin Ck), and formula (c): min(Ck)<=20 degrees. In the formulas, Ck is an offset angle of a k-th plane, Bkk-1 is an angle defined by an offset downstream direction of the k-th plane and a (k−1)-th ridge line, and Bkk is an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.