Stripping solution for photolithography and pattern formation method
US9535330B2 · kind B2 · utility
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Key dates
| Filing date | Oct 30, 2012 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Oct 30, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.