Patent · US Active

Mask for EUV lithography, EUV lithography system and method for optimising the imaging of a mask

US9535332B2 · kind B2 · utility

6Cited by

1References

30Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Johannes Ruoff · Aalen, DE
Daniel Kraehmer · Aalen, DE

Key dates

Filing date	Dec 14, 2012
Grant date	Jan 3, 2017
Priority date	—
Expiry date	Aug 3, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/24
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A mask (105) for EUV lithography includes a substrate (107), a multi-layer coating (108) applied to the substrate (107) and a mask structure (109) which is applied to the multi-layer coating (108) and which has an absorber material, the mask structure (109) having a maximum thickness of less than 100 nm, preferably not exceeding a maximum thickness of 30 nm, particularly preferably 20 nm, in particular 10 nm. Also disclosed is an EUV lithography system having such a mask (105) and a method for optimizing the imaging of such a mask (105).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.