Plasma generating device, method of controlling the same, and substrate processing device including the plasma generating device
US9536708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2014 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Mar 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.