Cleaning formulations
US9536730B2 · kind B2 · utility
0Cited by
18References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Sep 23, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/426
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.