Patent · US Active

TSV via provided with a stress release structure and its fabrication method

US9536837B2 · kind B2 · utility

3Cited by

4References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Yann Lamy · Voiron, FR

Key dates

Filing date	Dec 21, 2012
Grant date	Jan 3, 2017
Priority date	—
Expiry date	Dec 21, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/00014
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A TSV via structure comprising an upper part made on the side of the front face of a substrate in which electronic components are located and a lower part with height and cross-section smaller than the height and cross-section the upper part, the arrangement of the connection element in the substrate being such that it releases stresses generated by the different materials of said structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.