Recess with asymmetric walls and method of fabricating the same
US9536922B2 · kind B2 · utility
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2References
7Claims
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Key dates
| Filing date | Dec 2, 2014 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.