Semiconductor device and method for manufacturing the same
US9536946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2015 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Aug 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having an active region, a gate structure intersecting the active region and extending in a first direction parallel to a top surface of the substrate, a first source/drain region and a second source/drain region disposed in the active region at both sides of the gate structure, respectively, and a first modified contact and a second modified contact in contact with the first source/drain region and the second source/drain region, respectively. The distance between the gate structure and the first modified contact is smaller than the distance between the gate structure and the second modified contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.