Semiconductor device with increased safe operating area
US9537000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2013 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Dec 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
A semiconductor device includes a substrate having a surface, a composite body region disposed in the substrate, having a first conductivity type, and comprising a body contact region at the surface of the substrate and a well in which a channel is formed during operation, a source region disposed in the semiconductor substrate adjacent the composite body region and having a second conductivity type, and an isolation region disposed between the body contact region and the source region. The composite body region further includes a body conduction path region contiguous with and under the source region, and the body conduction path region has a higher dopant concentration level than the well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.