Semiconductor device with an epitaxial layer and method of fabricating the same
US9537029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2014 |
| Grant date | Jan 3, 2017 |
| Priority date | — |
| Expiry date | Dec 24, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor layer including a recess region and protrusions defined by the recessed region, first insulating patterns provided on the protrusions and extending to sidewalls of the protrusions, and a second semiconductor layer to fill the recess region and cover the first insulating patterns. The protrusions includes a first group of protrusions spaced apart from each other in a first direction to constitute a row and a second group of protrusions spaced from the first group of protrusions in a second direction intersecting the first direction and spaced from each other in the first direction to constitute a row. The second group of protrusions are shifted from the first group of protrusions in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.