Photovoltaic devices including MG-doped semiconductor films

US9537039B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Akhlesh Gupta · Sylvania, US
• Ricky C. Powell · Ann Arbor, US
• David Eaglesham · Perrysburg, US

Key dates

• Filing date: Nov 26, 2012
• Grant date: Jan 3, 2017
• Expiry date: Oct 5, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A photovoltaic cell can include a dopant in contact with a semiconductor layer. The photovoltaic cell can include a transparent conductive layer and a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer including magnesium. In certain circumstances, a substrate can be a glass substrate. In other circumstances, a substrate can be a metal layer. The first semiconductor layer can include CdS. The first semiconductor layer can have a thickness of between about 200 or 3000 Angstroms. The first semiconductor layer can include 1-20% magnesium. A method of manufacturing a photovoltaic cell can include providing a transparent conductive layer and depositing a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer treated with magnesium.