Patent · US Active

Optoelectric device and method for manufacturing the same

US9537044B2 · kind B2 · utility

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18Claims
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Key dates

Filing dateOct 23, 2013
Grant dateJan 3, 2017
Priority date
Expiry dateOct 23, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/821
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.