Method and apparatus for beam deflection in a gas cluster ion beam system
US9540725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Apr 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle φ, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.