Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium
US9540727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Mar 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.