Magnetic tunnel junction ternary content addressable memory
US9543013B1 · kind B1 · utility
9Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Jun 6, 2016 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jun 6, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/046
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Magnetic Tunnel Junction (MJT) Ternary Content Addressable Memory (TCAM) employing six transistors and exhibiting reduced standby leakage and improved area-efficiency. In the proposed TCAM, data can be written to the MJT devices by conventional current induced magnetization techniques and by controlling the source line, thereby eliminating the need for external writing circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.