Swaroop Ghosh
15Patents
4h-index
17Co-inventors
49Inventor score
Filing activity: Dec 22, 2010 → Sep 19, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9543013B1 | Magnetic tunnel junction ternary content addressable memory | Physics | 9 | Active |
| US9859018B2 | Physically unclonable function based on domain wall memory and method of use | Physics | 6 | Active |
| US10036773B1 | Aging-sensitive recycling sensors for chip authentication | Physics | 5 | Active |
| US9812205B2 | MTJ-based content addressable memory with measured resistance across matchlines | Physics | 4 | Active |
| US8406073B1 | Hierarchical DRAM sensing | Physics | 4 | Active |
| US9728241B2 | Non-volatile flip-flop with enhanced-scan capability to sustain sudden power failure | Physics | 3 | Active |
| US10976360B2 | Aging-sensitive recycling sensors for chip authentication | Physics | 1 | Active |
| US10014864B2 | Wide operating level shifters | Electricity | 1 | Active |
| US9013941B2 | DRAM with pulse sense amp | Physics | 1 | Active |
| US8456946B2 | NAND logic word line selection | Physics | 1 | Active |
| US10177768B2 | Threshold voltage defined switches for programmable camouflage gates | Electricity | 1 | Active |
| US9673821B1 | Wide operating level shifters | Electricity | 0 | Active |
| US10302692B1 | Aging-sensitive recycling sensors for chip authentication | Physics | 0 | Active |
| US8547777B2 | Nor logic word line selection | Physics | 0 | Active |
| US9818466B2 | Robust slope detection technique for STTRAM and MRAM sensing | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.