Error corrected pre-read for upper page write in a multi-level cell memory
US9543019B2 · kind B2 · utility
2Cited by
0References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 11, 2012 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jan 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, apparatuses and articles of manufacture may receive a first page of data and correct one or more errors in the first page of data to generate a page of corrected data. A program command may then be sent with a second page of data and the page of corrected data, to program a page of memory to store the second page of data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.