Method for curing flowable layer
US9543141B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Dec 9, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Dec 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a semiconductor structure are provided. The method for forming a semiconductor structure includes forming a flowable layer over a substrate and heating the flowable layer to form a cured layer in a curing process. In addition, the curing process is performed under a pressure of over 2 atmospheres, and the flowable layer reacts with precursors in the flowable layer during the curing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.