Void monitoring device for measurement of wafer temperature variations
US9543219B2 · kind B2 · utility
3Cited by
17References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 2, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of monitoring a temperature of a plurality of regions in a substrate during a deposition process, the monitoring of the temperature including: forming, in the monitored plurality of regions, a plurality of metal structures each with a different metal pattern density, where each metal pattern density corresponds to a threshold temperature at or above which metal voids and surface roughness are formed in the plurality of metal structures, and detecting metal voids and surface roughness in the plurality of metal structures to determine the temperature of the monitored plurality of regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.